1/5 bat60j ? january 2003 - ed: 6a small signal schottky diode n very small conduction losses n negligible switching losses n low forward voltage drop n extremely fast switching n surface mounted device features and benefits schottky barrier diode encapsulated in a sod-323 small smd package. this device is intended for use in portable equipments. it is suited for dc to dc converters, step-up conversion and power management. description sod-323 symbol parameter value unit v rrm repetitive peak reverse voltage 10 v i f peak forward current d = 0.11 3 a i fsm surge non repetitive forward current tp=10ms 5 a p tot power dissipation ta=25c 310 mw t stg storage temperature range - 65 to +150 c tj maximum operating junction temperature * 150 c tl maximum temperature for soldering during 10s 260 c absolute ratings (limiting values) symbol parameter value unit r th (j-a) junction to ambient (*) 400 c/w (*) mounted on epoxy board with recommended pad layout. thermal resistance *: dptot dtj rth j a < - 1 () thermal runaway condition for a diode on its own heatsink a k 60
bat60j 2/5 symbol tests conditions tests conditions min. typ. max. unit v f * forward voltage drop tj = 25c i f = 10 ma 0.28 0.32 v i f = 100 ma 0.35 0.40 i f = 1 a 0.53 0.58 i r ** reverse leakage current tj = 25c v r =5v 1 3 m a tj = 25c v r = 8 v 1.3 4 tj = 25c v r =10v 2 6 tj = 25c v r = 12 v 2.5 7.5 tj = 80c v r = 8 v 73 150 static electrical characteristics pulse test: * tp = 380 m s, d <2% ** tp = 5ms, d <2% to evaluate the conduction losses the following equation: p=0.38xi f(av) + 0.17 i f 2 (rms)
bat60j 3/5 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 if(av) (a) pf(av)(w) t d =tp/t tp d = 0.05 d = 0.1 d = 0.2 d = 0.5 d = 1 fig. 1: average forward power dissipation versus average forward current. 0 25 50 75 100 125 150 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 tamb(c) if(a) t d =tp/t tp fig. 2-1: peak forward current versus ambient temperature ( d = 0.11). 0 25 50 75 100 125 150 0.00 0.05 0.10 0.15 0.20 0.25 0.30 0.35 0.40 0.45 0.50 0.55 0.60 tamb(c) if(av)(a) t d =tp/t tp fig. 2-2: average forward current versus ambient temperature ( d = 0.5). 1e-3 1e-2 1e-1 1e+0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 t(s) im(a) ta=25c ta=50c ta=75c i m t d =0.5 fig. 3: non repetitive surge peak forward current versus overload duration (maximum values). 1e-4 1e-3 1e-2 1e-1 1e+0 1e+1 1e+2 1e-3 1e-2 1e-1 1e+0 t(s) zth(j-a)/rth(j-a) d = 0.5 d = 0.2 d = 0.1 single pulse t d =tp/t tp fig. 4: relative variation of thermal impedance junc- tion to ambient versus pulse duration (epoxy printed circuit board fr4 with recommended pad layout). 012345678910 1e-4 1e-3 1e-2 1e-1 1e+0 1e+1 vr(v) ir(ma) tj=80c tj=25c tj=150c fig. 5: reverse leackage current versus reverse voltage applied (typical values).
bat60j 4/5 0 25 50 75 100 125 150 1e-1 1e+0 1e+1 1e+2 1e+3 1e+4 1e+5 tj(c) ir[tj] / ir[tj=25c] vr=8v fig. 6: reverse leackage current versus junction temperature (typical values). 110 10 100 vr(v) c(pf) f=1mhz tj=25c fig. 7: junction capacitance versus reverse voltage applied (typical values). 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1e-1 1e+0 1e+1 vfm(v) ifm(a) tj=150c (typical values) tj=80c (typical values) tj=25c (maximum values) fig. 8-1: forward voltage drop versus forward cur- rent (high level). 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 vfm(v) ifm(a) tj=150c (typical values) tj=25c (maximum values) tj=80c (typical values) fig. 8-2: forward voltage drop versus forward cur- rent (low level). 0 102030405060708090100 100 150 200 250 300 350 400 450 500 550 600 s(cu) (mm2) rth(j-a) (c/w) if=0.75a fig. 9: thermal resistance junction to ambient ver- sus copper surface (epoxy printed circuit board fr4, copper thickness: 35 m m).
bat60j 5/5 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectronics. the st logo is a registered trademark of stmicroelectronics ? 2003 stmicroelectronics - printed in italy - all rights reserved. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore spain - sweden - switzerland - united kingdom - united states. http://www.st.com package mechanical data sod-323 h b d e a1 a l q1 c ref. dimensions millimeters inches min. max. min. max. a 1.17 0.046 a1 0 0.1 0 0.004 b 0.25 0.44 0.01 0.017 c 0.1 0.25 0.004 0.01 d 1.52 1.8 0.06 0.071 e 1.11 1.45 0.044 0.057 h 2.3 2.7 0.09 0.106 l 0.1 0.46 0.004 0.02 q1 0.1 0.41 0.004 0.016 type marking package weight base qty delivery mode BAT60JFILM 60 sod-323 0.005 g. 3000 tape & reel n epoxy meets ul94v-0 marking
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